Please use this identifier to cite or link to this item: http://hdl.handle.net/123456789/91
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dc.contributor.authorLitty Irimpan a, A. Deepthy-
dc.contributor.authorBindu Krishnan, L M Kukreja-
dc.contributor.authorV.P.N Nampoori, Radhakrishnan a-
dc.date.accessioned2016-11-08T09:43:55Z-
dc.date.available2016-11-08T09:43:55Z-
dc.date.issued2008-01-16-
dc.identifier.urihttp://hdl.handle.net/123456789/91-
dc.description.abstractIn the present work, we report the third order nonlinear optical properties of ZnO thin films deposited using self assembly, sol gel process as well as pulsed laser ablation by z scan technique. ZnO thin films clearly exhibit a negative nonlinear index of refraction at 532 nm and the observed nonlinear refraction is attributed to two photon absorption followed by free carrier absorption. Although the absolute nonlinear values for these films are comparable, there is a change in the sign of the absorptive nonlinearity of the films. The films developed by dip coating and pulsed laser ablation exhibit reverse saturable absorption whereas the self assembled film exhibits saturable absorption. These different nonlinear characteristics in the self assembled films can be mainly attributed to the saturation of linear absorption of the ZnO defect states.en_US
dc.language.isoenen_US
dc.publisherELSEVIERen_US
dc.relation.ispartofseries281 (2008) 2938–2943;-
dc.titleEffect of self assembly on the nonlinear optical characteristics of ZnO thin filmsen_US
Appears in Collections:Dr.Litty Mathew Irimpan

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